device physics

By means of the formulae derived from device physics of HBT, the influence of device parameters on the minimum noise figure is also represented.

同时通过基于异质结双极晶体管器件物理的公式，给出了器件参数对器件最小噪声系数的影响。

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When scaled down to the ultra deep sub-micron field, the traditional CMOS device encounters serious challenges in device physics and fabrication technologies.

进入超深亚微米领域以后，传统CMOS器件遇到了器件物理、工艺技术等方面难以逾越的障碍。

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This paper briefly introduces its operational mechanism, basic structure, depletion and enhancement modes, fabrication technology, a comparison of its current performance with that of conventional GaAs FET, preliminary analysis of its device physics and the calculation of V-I charateristics.

本文简述了它的工作机理、基本结构、耗尽型及增强型模式、工艺制造、目前达到的性能与通常的GaAs FET的比较、初步的器件物理分析和伏安特性计算。

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Study of Novel Structural SOI Materials and Device Physics

新结构SOI材料与器件物理研究

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Has a good knowledge of analog circuitry, device physics and process.

模拟电路，器件和工艺有较好基础。

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Besides offering a physical insight into device physics, the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.

该模型对设计全耗尽型非对称异质双栅应变硅MOSFET器件有着重要的指导作用。

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For example, the Navier-Stokes equations of fluid flow at high Reynolds number, the equations governing flow in porous media, the drift diffusion equations of semiconductor device physics, and mathematical models of liquid crystal materials and of chemical reactions.

例如，流体力学中的高雷诺数Navier-Stokes方程，多孔媒质的流体方程，半导体的扩散方程，化学反应中的反应方程等等。

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A comprehensive experiment device for general physics

一个综合性物理实验新装置的研制

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In this article, the basic device physics, materials used in organic light emitting diodes, device degradation mechanisms, and the opportunities of using this technology for commercial display applications will be discussed.

本文对有机电致发光二极管的工作原理、材料和衰变机理进行了探讨，并分析了这种技术在商业显示方面的应用前景。

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Then, the key factors of blocking voltages, current gain, frequency response and power loss were analyzed by combining semiconductor physics and semiconductor device physics, together with Junction Termination Technology ( JTT), device design principles.

进而，根据半导体物理及半导体器件设计原则着重分析了影响器件击穿电压、电流增益、频率响应的主要因素，结合结终端技术分析和器件设计要点，设计一种新结构。

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" It is remarkable to see this cloaking device demonstrated in real life and on a workable scale," said a spokesperson for the Institute of Physics.

“这简直是太不可思议了，你在可控的步骤内能够直接看到隐身装置是如何运作的，就在真实的世界里，”物理学院的发言人说到。

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When an engineer or scientist designs a new electronic device or physics experiment, the job of constructing and operating the test often falls to a technician in this field.

当一个工程师或科学家设计了一种新的电子设备模型或物理实验方案，实施和操作这些方案工作往往落在这一领域的技术人员身上。

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Sound knowledge in semiconductor physics, semiconductor device testing and characterization.

具备半导体物理学, 半导体设备测试和性能的相关知识.

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The great progresses on device physics, manufacturing process, mass production and application on amorphous silicon solar cells were summarized.

总结了非晶硅太阳电池在器件物理、制造工艺、大规模生产和应用方面所取得的重大进展。文章分析了非晶硅太阳电池作为空间能源系统技术上的主要优势；

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As we shrink MEMS to NEMS, device physics becomes increasingly dominated by the surfaces.

当我们把尺寸从mems缩小到NEMS时, 表面在元件物理的地位就变得越加重要.

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With in-depth knowledge on semiconductor device physics and practical experience on processing.

深入解半导体元件物理及制程。

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The adsorption properties of metal atoms on semiconductor and the structural changes of semiconductor atoms adsorb on metal surface are all important subjects in semiconductor device physics and modern electronic industry.

金属原子吸附在半导体表面的吸附特征，以及半导体颗粒吸附在金属表面上的界面结构和电子性质，都是半导体器件物理和现代电子工业的重要课题。

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The method of adjusting parameter manually needs preferable knowledge on device physics, and can not always get suitable results.

如果仍采用手工参数调整的方法，不仅需要有较好的器件物理知识，而且也不一定能得到合适的结果。

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Knowledge of semiconductor device fabrication process, basic training of semiconductor device physics, good English.

半导体器件制造的知识, 基本的半导体器件物理训练, 英语好.

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knowledge of mos and bjt device physics and device models.

知识的MOS和BJT的器件物理和器件模型。

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Device physics of integrated injection logic

集成注入逻辑器件的物理特性

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A model for inversion channel electron mobility of GaN n-MOSFET's is proposed based on semiconductor device physics.

在器件物理的基础上，提出了一种半经验的GaN n-MOSFET反型沟道电子迁移率模型。

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